shantou huashan electronic devices co.,ltd . applications high breakdown voltage and high reliability . fast switching speed . absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 500 v i c =1ma, i e =0 bv ceo collector-emitter breakdown voltage 400 v i c =5ma, i b =0 bv ebo emitter-base breakdown voltage 7 v i e =1ma i c =0 i cbo collector cut-off current 10 a v cb =400v, i e =0 i ebo emitter cut-off current 10 a v eb =5v, i c =0 h fe 1 dc current gain 15 50 v ce =5v, i c =0.8a h fe 2 dc current gain 10 v ce =5v, i c =4a h fe 3 dc current gain 10 v ce =5v, i c =10ma v ce(sat) collector- emitter saturation voltage 0.8 v i c =4a, i b =0.8a v be(sat) base-emitter saturation voltage 1.5 v i c =4a, i b =0.8a f t current gain-bandwidth product 20 mhz v ce =10v,i c =0.8a cob output capacitance 80 pf v cb =10v, i e =0 f=1 mhz t on turn-on time 0.5 s v cc =10v,i c =5a t stg storage time 2.5 s i b1 =1a i b2 =-2a t f fall time 0.3 s rl=40ohms h fe classification l m n 1530 2040 3050 t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation tc=25 50w v cbo collector-base voltage 500v v ceo collector-emitter voltage 400v v ebo emitter-base voltage 7v i c collector current 7a ib base current 3a 1 D base b 2 D collector c 3 D emitter e to-220 HC4106 npn s i l i c o n t r a n s i s t o r
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